The evolution of the three-dimensional configuration of transistors resolved the issues brought about by planar transistor technology. In this article, we will compare finFET vs. GAAFETs confirm 3D technology in semiconductor transistor fabrication and help overcome the limitations of finFET. FinFET technology emerged as a solution for planar transistor-induced problems by opening the scope for three-dimensional (3D) transistor construction. The development of multigate devices such as finFETs and GAAFETs are innovations in transistor technology that offset planar transistors. However, the scaling of CMOS planar transistors brought numerous problems such as gate leakage currents, short channel effects, quantum tunneling leakage, variability, mobility degradation, etc. The downsizing of planar transistors continued with advanced manufacturing processes. CMOS technology introduced planar transistors with low costs, low power consumption, and high packing density. CMOS technology started the trend of miniaturization and performance enhancement in semiconductor electronics, especially in integrated circuit applications. Nanosheet-based GAAFETs provide a larger drive current compared to finFET technology.ĭuring the mid 20th century, complementary metal-oxide semiconductors (CMOS) were a remarkable invention for the electronics industry. In GAAFET construction, the channel is lifted up and offers the possibility to vary the channel width as per the requirements of the transistor type in use. FinFET technology utilizes fin-shaped FETs and offers various benefits such as low leakage currents, high drive currents, and fast switching times.
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